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Type Designator: 2N4125
Data ic dan transistor all data semua ic + transitor tv cengkong servis.electronic.cellular.alat-alat listrix. Daftar persamaan transistor. Data persamaan transistor. Type equivalen. Audio driver.
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.31 W
![2n5457 datasheet 2n5457 datasheet](/uploads/1/2/7/3/127342820/449999840.jpg)
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
2N4125 Transistor Equivalent Substitute - Cross-Reference Search
2N4125 Datasheet (PDF)
1.1. 2n4125 2n4126.pdf Size:165K _motorola
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4125/D Amplifier Transistors PNP Silicon 2N4125 2N4126 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29–04, STYLE 1 Rating Symbol 2N4125 2N4126 Unit TO–92 (TO–226AA) Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 30 25 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Cont
1.2. 2n4125.pdf Size:61K _fairchild_semi
2N4125 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector Current
1.3. 2n4123 2n4124 2n4125 2n4126.pdf Size:80K _central
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com
Datasheet: 2N4114, 2N4115, 2N4116, 2N412, 2N4121, 2N4122, 2N4123, 2N4124, BC546, 2N4126, 2N4127, 2N4128, 2N413, 2N4130, 2N4131, 2N4132, 2N4133.
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2N5457Datasheet (PDF)1.1. Size:110K motorolaMOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5457/DJFETs General Purpose2N5457NChannel Depletion1 DRAIN.Motorola Preferred Device3GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value Unit123DrainSource Voltage VDS 25 VdcDrainGate Voltage VDG 25 VdcCASE 2904, STYLE 5Reverse GateSource Voltage VGSR 25 VdcTO92 (TO226AA)Gate Current IG 101.2. Size:129K fairchildsemi2N5457 MMBF MMBF MMBF5459GSTO-92GSSOT-23NOTE: Source & DrainDDare interchangeableMark: 6D / 61S / 6LN-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess 55.Absolute Maximum Ratings. TA = 25°C unless otherwise notedSymbo1.3.
Size:59K central145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-18241.4. Size:138K onsemi2N5457, 2N5458JFETs - General PurposeN-Channel - DepletionN-Channel Junction Field Effect Transistors, depletion mode(Type A) designed for audio and switching applications.DRAIN N-Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance3 High DC Input Resistance GATE Low Transfer and Input Capacitance Low Cross-Mo.
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